Abstract This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5 MeV) at 360 K. Two groups of samples with low [Oi]=6.9× 1017 cm-3 and high [ Oi]=1.06× 1018 cm-3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃, accompanied with the appearing of VO3. For both kinds of specimens, the concentration of VO3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.
Received: 14 July 2008
Revised: 07 January 2009
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 50872028), Natural
Science Foundation of Hebei Province of China (Grant Nos E200500048
and E2008000079) and Specialized Research Fund for the Doctoral
Program of Higher
Education of China (Grant No 20050080006).
Cite this article:
Chen Gui-Feng(陈贵锋), Yan Wen-Bo(阎文博), Chen Hong-Jian(陈洪建), Cui Hui-Ying(崔会英), and Li Yang-Xian(李养贤) Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si 2009 Chin. Phys. B 18 2988
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