High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diode at room temperature
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉)
Microelectronic School, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
AbstractThis paper reports that Ni and Ti/4H-SiC Schottky barrier diodes (SBDs) were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43×1014 e/cm2. After radiation, the Schottky barrier height $\phi _{\rm B} $ of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of $\phi _{\rm B} $ could be explained by interface states of changed Schottky contacts. The on-state resistance RS of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, $\phi _{\rm B} $ of the diodes recovered completely after one week, and the RS partly recovered.
Received: 29 October 2008
Revised: 11 November 2008
Accepted manuscript online:
PACS:
85.30.Hi
(Surface barrier, boundary, and point contact devices)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60606022), the Xian
Applied Materials Foundation of China (Grant No XA-AM-200702) and
the Advanced Research Foundation of China (Grant No
9140A08050508).
Cite this article:
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diode at room temperature 2009 Chin. Phys. B 18 1931
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