Effect of hydrogenation time on magnetic and electrical properties of polycrystalline Si0.956Mn0.044:B thin films
Liu Xing-Chong(刘兴翀)a)†, Lu Zhi-Hai(陆智海)b), Lin Ying-Bin(林应斌)b), Wang Jian-Feng(王剑峰)b), Lu Zhong-Lin(路忠林)b), Lü Li-Ya(吕丽娅)b), Zhang Feng-Ming(张凤鸣)b), and Du You-Wei(都有为)b)
aSchool of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; bDepartment of Physics, Nanjing University, Nanjing 210093, China
Abstract This paper reports that polycrystalline Si0.956Mn0.044:B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The polycrystalline thin films were treated by hydrogen plasma excited with approach of radio-frequency plasma enhanced chemical vapour deposition for different time of 10 minutes, 15 minutes and 40 minutes. After hydrogenation, the structural properties of the films do not show any change, while both the saturation magnetization and the hole concentration in the films increase at first, then decrease with the increase of hydrogenation time. The obvious correlation between the magnetic properties and the transport properties of the polycrystalline Si0.956Mn0.044:B films suggests that a mechanism of hole-mediated ferromagnetism is believed to exist in Si-based diluted magnetic semiconductors.
Received: 19 March 2008
Revised: 08 September 2008
Accepted manuscript online:
PACS:
75.70.Ak
(Magnetic properties of monolayers and thin films)
Fund: Project supported by the National
Key Program for Fundamental Research Development Plan of China (973
project).
Cite this article:
Liu Xing-Chong(刘兴翀), Lu Zhi-Hai(陆智海), Lin Ying-Bin(林应斌), Wang Jian-Feng(王剑峰), Lu Zhong-Lin(路忠林), Lü Li-Ya(吕丽娅), Zhang Feng-Ming(张凤鸣), and Du You-Wei(都有为) Effect of hydrogenation time on magnetic and electrical properties of polycrystalline Si0.956Mn0.044:B thin films 2009 Chin. Phys. B 18 778
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