Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
Bao Xiao-Qing(包晓清)a)b), Ge Dao-Han(葛道晗)a)b), Zhang Sheng(张圣)a)b), Li Jin-Peng(李金鹏)a)b), Zhou Ping(周萍)a), Jiao Ji-Wei(焦继伟)a)†, and Wang Yue-Lin(王跃林)a)
a State Key Laboratories of Transducer Technology, National Key Laboratories of Microsystem Technology, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China; b Graduate School of Chinese Academy of Sciences, Beijing 100049, China
Abstract In this paper, five factors, namely the HF (hydrofluoric acid) concentration, field strength, illumination intensity as well as the oxidizing-power and conductivity of electrolytes were found to strongly affect the fast pore etching. The oxidizing power of aqueous HF electrolyte of different concentrations was especially measured and analysed. A positive correlation between optimal bias and HF concentration was generally observed and the relationship was semi-quantitatively interpreted. Pore density notably increased with enhanced HF-concentration or bias even on patterned substrates where 2D (two-dimensional) nuclei were densely pre-textured. The etch rate can reach 400μm/h and the aspect ratio of pores can be readily driven up to 250.
Received: 14 May 2008
Revised: 10 September 2008
Accepted manuscript online:
Fund: Project supported by Chinese
National `863' Project (Grant No 2006AA04Z312) and `973' Project
(Grant No 2006CB300403) and the National Natural Science Foundation
of China (Grant No 60772030).
Cite this article:
Bao Xiao-Qing(包晓清), Ge Dao-Han(葛道晗), Zhang Sheng(张圣), Li Jin-Peng(李金鹏), Zhou Ping(周萍), Jiao Ji-Wei(焦继伟), and Wang Yue-Lin(王跃林) Fast pore etching on high resistivity n-type silicon via photoelectrochemistry 2009 Chin. Phys. B 18 664
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