Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature
Hu Shi-Gang(胡仕刚)†,Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰)
School of Microelectronics, Xidian University, Xi'an 710071, China ; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract This paper studies the degradation of device parameters and that of stress induced leakage current (SILC) of thin tunnel gate oxide under channel hot electron (CHE) stress at high temperature by using n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with 1.4-nm gate oxides. The degradation of device parameters under CHE stress exhibits saturating time dependence at high temperature. The emphasis of this paper is on SILC of an ultra-thin-gate-oxide under CHE stress at high temperature. Based on the experimental results, it is found that there is a linear correlation between SILC degradation and Vh degradation in NMOSFETs during CHE stress. A model of the combined effect of oxide trapped negative charges and interface traps is developed to explain the origin of SILC during CHE stress.
Received: 22 August 2008
Revised: 03 April 2009
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos 60736033 and
60506020).
Cite this article:
Hu Shi-Gang(胡仕刚),Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰) Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature 2009 Chin. Phys. B 18 5479
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