Abstract A new analytical model for reverse characteristics of 4H--SiC merged PN--Schottky diodes (MPS or JBS) is developed. To accurately calculate the reverse characteristics of the 4H--SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel--Kramers--Brillouin (WKB) theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing (S) and P-junction depth (Xj) on the characteristics of 4H--SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.
Received: 21 March 2009
Revised: 19 May 2009
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the Xi'an
Applied Materials Innovation Fund (Grant No XA-AM-200702).
Cite this article:
Song Qing-Wen(宋庆文),Zhang Yu-Ming(张玉明),Zhang Yi-Men(张义门), ü Hong-Liang(吕红亮),Chen Feng-Ping(陈丰平), and Zheng Qing-Li(郑庆立) Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes 2009 Chin. Phys. B 18 5474
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