GaN-based violet laser diodes grown on free-standing GaN substrate
Zhang Li-Qun(张立群)a)†,Zhang Shu-Ming(张书明)a),Jiang De-Sheng(江德生)a), Wang Hui(王辉)a),Zhu Jian-Jun(朱建军)a),Zhao De-Gang(赵德刚)a), Liu Zong-Shun(刘宗顺)a), and Yang Hui(杨辉) a)b)‡
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Abstract A violet laser diode (LD) structure is grown on a free-standing c-plane GaN substrate and 4 μm × 800 μm ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet-coating and chip-mounting conditions are investigated under pulse mode operation. The active region temperatures of p-side up and p-side down mounted LDs are calculated with different injection currents. The calculated thermal resistances of p-side up and p-side down mounted LDs are 4.6 K/W and 3 K/W, respectively. The threshold current of the p-side down mounted LD is much lower than that of the p-side up mounted LD. The blue shift of the emission wavelength with increasing injection current is observed only for the LD with p-side down mounting configuration, due to the more efficient heat dissipation.
Received: 16 March 2009
Revised: 06 April 2009
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos 60506001, 60776047,
60476021, 60576003 and 60836003), and the National Basic Research
Programme of China (Grant No 2007CB936700).
Cite this article:
Zhang Li-Qun(张立群),Zhang Shu-Ming(张书明),Jiang De-Sheng(江德生), Wang Hui(王辉),Zhu Jian-Jun(朱建军),Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), and Yang Hui(杨辉) GaN-based violet laser diodes grown on free-standing GaN substrate 2009 Chin. Phys. B 18 5350
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