Please wait a minute...
Chin. Phys. B, 2009, Vol. 18(11): 4966-4969    DOI: 10.1088/1674-1056/18/11/058
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

SiC based Si/SiC heterojunction and its rectifying characteristics

Zhu Feng(朱峰), Chen Zhi-Ming(陈治明), Li Lian-Bi(李连碧), Zhao Shun-Feng(赵顺峰), and Lin Tao(林涛)
Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
Abstract  The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H6 as a dopant for p-Si grown at temperatures in a range of 700--950 . X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850 ℃ to 900 ℃ are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.
Keywords:  Si/6H-SiC      heterojunction      heteroepitaxy SiC  
Received:  25 December 2008      Revised:  05 March 2009      Accepted manuscript online: 
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.40.Ei (Rectification)  
  68.55.A- (Nucleation and growth)  
  61.72.Mm (Grain and twin boundaries)  
  61.72.Nn (Stacking faults and other planar or extended defects)  
  68.35.B- (Structure of clean surfaces (and surface reconstruction))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60576044).

Cite this article: 

Zhu Feng(朱峰), Chen Zhi-Ming(陈治明), Li Lian-Bi(李连碧), Zhao Shun-Feng(赵顺峰), and Lin Tao(林涛) SiC based Si/SiC heterojunction and its rectifying characteristics 2009 Chin. Phys. B 18 4966

[1] Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor
Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Chin. Phys. B, 2023, 32(3): 037302.
[2] Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction
Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Chin. Phys. B, 2023, 32(3): 037401.
[3] Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction
Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2023, 32(2): 020701.
[4] Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu2ZnSn(S, Se)4 solar cell
Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Chin. Phys. B, 2023, 32(2): 028801.
[5] Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction
Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军). Chin. Phys. B, 2023, 32(2): 027504.
[6] High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack
Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). Chin. Phys. B, 2023, 32(1): 018503.
[7] Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells
Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Chin. Phys. B, 2022, 31(9): 098401.
[8] Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain
Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉). Chin. Phys. B, 2022, 31(8): 087101.
[9] Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.
[10] An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors
Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(6): 068502.
[11] Graphene-based heterojunction for enhanced photodetectors
Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超). Chin. Phys. B, 2022, 31(3): 038501.
[12] SnO2/Co3O4 nanofibers using double jets electrospinning as low operating temperature gas sensor
Zhao Wang(王昭), Shu-Xing Fan(范树兴), and Wei Tang(唐伟). Chin. Phys. B, 2022, 31(2): 028101.
[13] A broadband self-powered UV photodetector of a β-Ga2O3/γ-CuI p-n junction
Wei-Ming Sun(孙伟铭), Bing-Yang Sun(孙兵阳), Shan Li(李山), Guo-Liang Ma(麻国梁), Ang Gao(高昂), Wei-Yu Jiang(江为宇), Mao-Lin Zhang(张茂林), Pei-Gang Li(李培刚), Zeng Liu(刘增), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2022, 31(2): 024205.
[14] Skyrmion transport driven by pure voltage generated strain gradient
Shan Qiu(邱珊), Jia-Hao Liu(刘嘉豪), Ya-Bo Chen(陈亚博), Yun-Ping Zhao(赵云平), Bo Wei(危波), and Liang Fang(方粮). Chin. Phys. B, 2022, 31(11): 117701.
[15] A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode
Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读). Chin. Phys. B, 2022, 31(1): 018504.
No Suggested Reading articles found!