Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy
Shi Yu-Lei(施宇蕾), Zhou Qing-Li(周庆莉)†, and Zhang Cun-Lin(张存林)
Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China
Abstract This paper investigates the ultrafast carrier dynamics and surface photoconductivity of unbiased semi-insulating GaAs in detail by using a terahertz pump-emission technique. Based on theoretical modelling, it finds that transient photoconductivity plays a very important role in the temporal waveform of terahertz radiation pulse. Anomalous enhancement in both terahertz radiation and transient photoconductivity is observed after the excitation of pump pulse and we attribute these phenomena to carrier capture in the EL2 centers. Moreover, the pump power- and temperature-dependent measurements are also performed to verify this trapping model.
Received: 09 March 2009
Revised: 07 April 2009
Accepted manuscript online:
Fund: Project
supported by the National Basic Research Program (973 Program)
(Grant Nos 2007CB310408 and 2006CB302901), the National Natural
Science Foundation of China (Grant No 10804077), and Funding Project
for Academic Human Resources Development in Institu
Cite this article:
Shi Yu-Lei(施宇蕾), Zhou Qing-Li(周庆莉), and Zhang Cun-Lin(张存林) Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy 2009 Chin. Phys. B 18 4515
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