Abstract SrBi4-xFexTi4O15 (SBFT-x) thin films (x =0.00, 0.05, 0.08, 0.15) have been synthesized on Pt/Ti/SiO2/Si (100) substrates by sol-gel method. This paper finds that Fe-doping does not change the crystal structure of SrBi4Ti4O15 (SBTi). The coercive filed (Ec) and remnant polarisation (Pr) increase at first, then decrease with the increase of Fe doping content. At a maximum applied field of 229 kV/cm, the 2Pr reaches a maximum value of 91.1 μC/cm2 at x = 0.05 and the corresponding Ec is 72 kV/cm. The 2Pr increases by about 260% and the Ec decreases by about 6%, respectively. Obviously, the ferroelectric property of SrBi4Ti4O15 is greatly enhanced by Fe doping. The fatigue-endurance characteristic of the SBFT-0.05 is not improved. After 1.1×109 read/write cycles at a frequency of 50 kHz, the nonvolatile polarisations (Pnv= P*- PΛ) decreased about 48% of its initial value.
Received: 30 September 2008
Revised: 12 March 2009
Accepted manuscript online:
(Liquid phase epitaxy; deposition from liquid phases (melts, solutions, And surface layers on liquids))
Cite this article:
Sun Jia-Bao(孙家宝), Sun Hui(孙慧), Wang Wei(王伟), Cai Hua(蔡华), and Chen Xiao-Bing(陈小兵) Great enhancement in remnant polarization of SrBi4Ti4O15 thin films by A-site doping of Fe3+ ions 2009 Chin. Phys. B 18 4511
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