Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor
Cao Quan-Jun(曹全君)a)†, Zhang Yi-Men(张义门)b), and Jia Li-Xin(贾立新)a)
a Institute of Electronic Science and Technology, College of Information Engineering, Zhejiang University of Technology, Hangzhou 310014, China; b School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H--SiC metal semiconductor field effect transistors (MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H--SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a (channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H--SiC MESFETs device.
Received: 21 December 2008
Revised: 13 March 2009
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project partly supported by
National Defense Basic Research Program of China (Grant No
51327010101).
Cite this article:
Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), and Jia Li-Xin(贾立新) Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor 2009 Chin. Phys. B 18 4456
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