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Chin. Phys. B, 2008, Vol. 17(9): 3471-3478    DOI: 10.1088/1674-1056/17/9/055
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Self-organized GaN/AlN hexagonal quantum-dots:strain distribution and electronic structure

Liu Yu-Min(刘玉敏)a)b), Yu Zhong-Yuan(俞重远)a)b), Ren Xiao-Min(任晓敏)b), and Xu Zi-Huan(徐子欢)a)b)
a School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China; b Key Laboratory of Optical Communication and Lightwave Technologies of Ministry of Education (Beijing University of Posts and Telecommunications), Beijing 100876, China
Abstract  This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shrödinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.
Keywords:  quantum dot      strain      electronic structure  
Received:  03 March 2008      Revised:  30 March 2008      Accepted manuscript online: 
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  62.20.D- (Elasticity)  
  62.25.-g (Mechanical properties of nanoscale systems)  
  71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor)  
  73.21.La (Quantum dots)  
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No 2003CB314901), the National Natural Science Foundation of China (Grant No 60644004), and High School Innovation and Introducing Intellect Project of China (Grant

Cite this article: 

Liu Yu-Min(刘玉敏), Yu Zhong-Yuan(俞重远), Ren Xiao-Min(任晓敏), and Xu Zi-Huan(徐子欢) Self-organized GaN/AlN hexagonal quantum-dots:strain distribution and electronic structure 2008 Chin. Phys. B 17 3471

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