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Chin. Phys. B, 2008, Vol. 17(9): 3444-3447    DOI: 10.1088/1674-1056/17/9/050
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Cathodoluminescent and electrical properties of an individual ZnO nanowire with oxygen vacancies

He Xiao-Bo(贺晓波), Yang Tian-Zhong(杨天中), Cai Jin-Ming(蔡金明), Zhang Chen-Dong(张晨栋), Guo Hai-Ming(郭海明), Shi Dong-Xia(时东霞), Shen Cheng-Min(申承民), and Gao Hong-Jun(高鸿钧)
Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  A single ZnO nanowire with intrinsic oxygen vacancies is utilized to fabricate four-contact device with focus ion beam lithography technique. Cathodoluminescent spectra indicate strong near-UV and green emission at both room temperature and low temperatures. Experimental measurement shows the temperature-dependent conductivity of the ZnO nanowire at low temperatures (below 100 K). The further theoretical analysis confirms that weak localization plays an important role in the electrical transport, which is attributed to the surface states induced by plenty of oxygen vacancies in ZnO nanowire.
Keywords:  ZnO nanowire      electrical transport      oxygen vacancies      weak localization  
Received:  03 June 2008      Revised:  30 June 2008      Accepted manuscript online: 
PACS:  78.60.Hk (Cathodoluminescence, ionoluminescence)  
  73.63.Nm (Quantum wires)  
  78.67.Lt (Quantum wires)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 60771037 and 90406022), the National High Technology Research and Development Program of China (Grant No 2008AA03Z309) and the National Key Basic Research Program of China (G

Cite this article: 

He Xiao-Bo(贺晓波), Yang Tian-Zhong(杨天中), Cai Jin-Ming(蔡金明), Zhang Chen-Dong(张晨栋), Guo Hai-Ming(郭海明), Shi Dong-Xia(时东霞), Shen Cheng-Min(申承民), and Gao Hong-Jun(高鸿钧) Cathodoluminescent and electrical properties of an individual ZnO nanowire with oxygen vacancies 2008 Chin. Phys. B 17 3444

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