Spin-dependent tunnelling through an indirect double-barrier structure
Wang Rui(王瑞)a)†, Zhang Cun-Xi(张存喜)b), Wang Jian-Ming(王建明)b), and Liang Jiu-Qing(梁九卿)b)
aPhysical Department, Zhejiang Ocean University, Zhoushan 316000, China; bDepartment of Physics and Institute of Theoretical Physics, Shanxi University, Taiyuan 030006, China
Abstract We use the transfer matrix method to study the quantum tunnelling through an indirect-band-gap double-barrier like the GaAs/AlAs/GaAs/AlAs/GaAs heterostructures along the [001] axis, which is described by the tight-binding model. The $X$-valley quasi-bound state gives rise to the Fano resonance different from the direct double-barrier transition in a resonance-tunnelling diode. The quantitative calculations demonstrate that a relatively high spin-polarization of the transmission probability can be achieved as compared with the single-barrier tunnelling case. Moreover the extension to the multi-barrier device is provided and leads to an important observation that the spin polarization increases with the number of barriers.
Received: 05 March 2008
Revised: 14 April 2008
Accepted manuscript online:
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 10475053).
Cite this article:
Wang Rui(王瑞), Zhang Cun-Xi(张存喜), Wang Jian-Ming(王建明), and Liang Jiu-Qing(梁九卿) Spin-dependent tunnelling through an indirect double-barrier structure 2008 Chin. Phys. B 17 3438
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