Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry
Bao Xiao-Qing(包晓清)a)b), Ge Dao-Han(葛道晗)a)b), and Jiao Ji-Wei(焦继伟)a)†
a State Key Laboratories of Transducer Technology, National Key Laboratories of Microsystem Technology, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China; b Graduate School of Chinese Academy of Sciences, Beijing 100039, China
Abstract Via anodizing patterned and unpatterned samples with a high HF concentration ([HF]), the degree of deviation from pore-formation theory was found to be markedly different. Based on the analysis of scanning electron microscope (SEM) micrographs and current--voltage ($I-V$) curves, the variation of physical and chemical parameters of patterned and unpatterned substrates was found to be crucial to the understanding of the observations. Our results indicate that the initial surface morphology of samples can have a considerable influence upon pore formation. The electric-field effect as well as current-burst-model was employed to interpret the underlying mechanism.
Received: 16 November 2007
Accepted manuscript online:
Fund: Project supported by the National
High Technology Development Program of China (Grant No 2006AA04Z312)
and the National Basic Research of China (Grant No 2006CB300403).
Cite this article:
Bao Xiao-Qing(包晓清), Ge Dao-Han(葛道晗), and Jiao Ji-Wei(焦继伟) Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry 2008 Chin. Phys. B 17 3130
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