Please wait a minute...
Chin. Phys. B, 2008, Vol. 17(8): 3108-3114    DOI: 10.1088/1674-1056/17/8/057
CROSS DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Studies of diamond-like carbon (DLC) films deposited on stainless steel substrate with Si/SiC intermediate layers

Wang Jing(王静)a)†, Liu Gui-Chang(刘贵昌)a), Wang Li-Da(王立达)a), Deng Xin-Lü(邓新绿)b), and Xu Jun(徐军)b)
a School of Chemical Engineering, Dalian University of Technology, Dalian 116012, China; b State Key Laboratory of Surface Modification by Laser, Ion and Electronic Beams, Dalian University of Technology, Dalian 116012, China
Abstract  In this work, diamond-like carbon (DLC) films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition (PEUMS-PVD) and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition (MW-ECRPECVD) techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy (AFM). With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio $I_{D}$/$I_{G}$ increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp$^{3}$-bond carbon density reducing, resulted in the peak values of hardness ($H$) and elastic modulus ($E$). Silicon addition promoted the formation of sp$^{3}$ bonding and reduced the hardness. The incorporated Si atoms substituted sp$^{2}$- bond carbon atoms in ring structures, which promoted the formation of sp$^{3}$-bond. The structural transition from C--C to C--Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.
Keywords:  diamond-like carbon (DLC)      stainless steel substrate      intermediate layers  
Received:  22 September 2007      Revised:  19 November 2007      Accepted manuscript online: 
PACS:  68.60.Bs (Mechanical and acoustical properties)  
  52.77.Dq (Plasma-based ion implantation and deposition)  
  62.20.Qp (Friction, tribology, and hardness)  
  68.55.-a (Thin film structure and morphology)  
  78.30.Hv (Other nonmetallic inorganics)  
  81.40.Np (Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure)  

Cite this article: 

Wang Jing(王静), Liu Gui-Chang(刘贵昌), Wang Li-Da(王立达), Deng Xin-Lü(邓新绿), and Xu Jun(徐军) Studies of diamond-like carbon (DLC) films deposited on stainless steel substrate with Si/SiC intermediate layers 2008 Chin. Phys. B 17 3108

[1] Tunable terahertz acoustic-phonon emission from monolayer molybdenum disulfide
Cheng-Xiang Zhao(赵承祥), Miao-Miao Zheng(郑苗苗), Yuan Qie(郄媛), and Fang-Wei Han(韩方微). Chin. Phys. B, 2022, 31(12): 127202.
[2] Manipulation of acoustic wavefront by transmissive metasurface based on pentamode metamaterials
Ying Liu(刘颖), Yi-Feng Li(李义丰), Xiao-Zhou Liu(刘晓宙). Chin. Phys. B, 2019, 28(2): 024301.
[3] Ultrafast optical probe of coherent acoustic phonons in Co2MnAl Heusler film
Wei Yan(闫炜), Hai-Long Wang(王海龙), Jian-Hua Zhao(赵建华), Xin-Hui Zhang(张新惠). Chin. Phys. B, 2017, 26(1): 016802.
[4] Membrane-based acoustic metamaterial with near-zero refractive index
Yi-Feng Li(李义丰), Jun Lan(蓝君), Hui-Yang Yu(余辉洋), Xiao-Zhou Liu(刘晓宙), Jia-Shu Zhang(张嘉澍). Chin. Phys. B, 2017, 26(1): 014302.
[5] A new model for film bulk acoustic wave resonators
Li Yu-Jin (李玉金), Yuan Xiu-Hua (元秀华). Chin. Phys. B, 2014, 23(11): 114601.
[6] Influences of nitrogen flow rate on the structures and properties of Ti and N co-doped diamond-like carbon films deposited by arc ion plating
Zhang Lin (张林), Ma Guo-Jia (马国佳), Lin Guo-Qiang (林国强), Ma He (马贺), Han Ke-Chang (韩克昌). Chin. Phys. B, 2014, 23(4): 048102.
[7] Post-annealing effect on the structural and mechanical properties of multiphase zirconia films deposited by a plasma focus device
I. A. Khan, R. S. Rawat, R. Ahmad, M. A. K. Shahid. Chin. Phys. B, 2013, 22(12): 127306.
[8] Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO2/Si substrate
Li Deng-Yue (李邓玥), Li Hong-Tao (李洪涛), Sun He-Hui (孙合辉), Zhao Lian-Cheng (赵连城 ). Chin. Phys. B, 2013, 22(2): 027802.
[9] Tunable Ba0.5Sr0.5TiO3 film bulk acoustic resonators using SiO2/Mo Bragg reflectors
Yang Tian-Ying (杨天应), Jiang Shu-Wen (蒋书文), Li Ru-Guan (李汝冠), Jiang Bin (姜斌). Chin. Phys. B, 2012, 21(10): 106801.
[10] Uniaxial stress influence on lattice, band gap and optical properties of n-type ZnO:first-principles calculations
Yang Ping(杨平), Li Pei(李培), Zhang Li-Qiang(张立强), Wang Xiao-Liang(王晓亮), Wang Huan(王欢), Song Xi-Fu(宋喜福), and Xie Fang-Wei(谢方伟) . Chin. Phys. B, 2012, 21(1): 016803.
[11] Yield strength of attached copper film
Zhang Yan(张研) and Zhang Jian-Min(张建民). Chin. Phys. B, 2011, 20(8): 086802.
[12] Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques
Guo Xi(郭希), Wang Hui(王辉), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Zhang Shu-Ming(张书明), and Yang Hui(杨辉). Chin. Phys. B, 2010, 19(10): 106802.
[13] Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling
G. Husnain, Chen Tian-Xiang(陈田祥), Fa Tao(法涛), and Yao Shu-De(姚淑德). Chin. Phys. B, 2010, 19(8): 087205.
[14] Quantitative measurement of local elasticity of SiOx film by atomic force acoustic microscopy
He Cun-Fu(何存富), Zhang Gai-Mei(张改梅), and Wu Bin(吴斌). Chin. Phys. B, 2010, 19(8): 084302.
[15] Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
Guo Xi (郭希), Wang Yu-Tian (王玉田), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Wang Hui (王辉), Zhang Shu-Ming (张书明), Qiu Yong-Xin (邱永鑫), Xu Ke (徐科), Yang Hui (杨辉). Chin. Phys. B, 2010, 19(7): 076804.
No Suggested Reading articles found!