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Chin. Phys. B, 2008, Vol. 17(7): 2655-2661    DOI: 10.1088/1674-1056/17/7/050
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Effect of the stoichiometry on the electronic structure of the Ni(111)/$\alpha$-Al2O3(0001) interface: a first-principles investigation

Shi Si-Qi(施思齐)a)b)†, Tanaka Shingo (田中真悟)b), and Kohyama Masanori(香山正憲)b)
a Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018, ChinaMaterials Science Research Group, Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology, 1-8-31, Midorigaoka, Ikeda, Osaka 563-8577, Japan
Abstract  In this paper first-principles calculations of Ni(111)/$\alpha $-Al$_{2}$O$_{3}$(0001) interfaces have been performed, and are compared with the preceding results of the Cu (111)/$\alpha $-Al$_{2}$O$_{3}$(0001) interface [2004 Phil. Mag. Lett. 84 425]. The Al-terminated and O-terminated interfaces have quite different adhesion mechanisms, which are similar to the Cu(111)/$\alpha $-Al$_{2}$O$_{3}$(0001) interface. For the O-terminated interface, the adhesion is caused by the strong O-2p/Ni-3d orbital hybridization and ionic interactions. On the other hand, the adhesion nature of the Al-terminated interface is the image-like electrostatic and Ni--Al hybridization interactions, the latter is substantial and cannot be neglected. Charge transfer occurs from Al$_{2}$O$_{3}$ to Ni, which is opposite to that in the O-terminated interface. The charge transfer direction for the Al-terminated and O-terminated Ni(111)/$\alpha$-Al$_{2}$O$_{3}$(0001) interfaces is similar to that in the corresponding Cu(111)/$\alpha$-Al$_{2}$O$_{3}$(0001) interface, but there exist the larger charge transfer quantity and consequent stronger adhesion nature, respectively.
Keywords:  metal/ceramic interface      stoichiometry      electronic structure      first-principles calculations  
Received:  20 May 2007      Revised:  02 November 2007      Accepted manuscript online: 
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  61.50.Nw (Crystal stoichiometry)  
  68.35.Np (Adhesion)  
  71.15.Dx (Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction))  
  71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)  
Fund: Project supported by Qianjiang Talent Project of Zhejiang Province of China (Grant No 2007R10028), the Science Foundation of Zhejiang Sci-Tech University (ZSTU) in China (Grant No 0613271-Y), and Science Foundation of Zhejiang Province of China (Grant No Y407188).

Cite this article: 

Shi Si-Qi(施思齐), Tanaka Shingo (田中真悟), and Kohyama Masanori(香山正憲) Effect of the stoichiometry on the electronic structure of the Ni(111)/$\alpha$-Al2O3(0001) interface: a first-principles investigation 2008 Chin. Phys. B 17 2655

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