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Chin. Phys. B, 2008, Vol. 17(7): 2557-2561    DOI: 10.1088/1674-1056/17/7/036
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Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

Liao Zai-Yi(廖栽宜), Yang Hua(杨华), and Wang Wei(王圩)
State Key Laboratory on Integrated Optoelectronics and Key Laboratory of Semiconductors Materials of Chinese Academy of Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.
Keywords:  electro-absorption modulator      uni-carrier photodiode      beam propagation method      monolithic integration  
Received:  21 August 2007      Revised:  07 January 2008      Accepted manuscript online: 
PACS:  42.82.Et (Waveguides, couplers, and arrays)  
  42.79.Hp (Optical processors, correlators, and modulators)  
  42.81.Qb (Fiber waveguides, couplers, and arrays)  
  42.82.Cr (Fabrication techniques; lithography, pattern transfer)  
  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 90401025) and the National 973 project (Grant No 2006CB604901).

Cite this article: 

Liao Zai-Yi(廖栽宜), Yang Hua(杨华), and Wang Wei(王圩) Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes 2008 Chin. Phys. B 17 2557

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