Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition
Liu Ci-Hui(刘磁辉)a)†, Liu Bing-Ce(刘秉策)b), and Fu Zhu-Xi(付竹西)a)
aDepartment of Physics, University of Science and Technology of China, Hefei 230026, China; b Department of Electron Science and Technology, University of Science and Technology of China, Hefei 230026, China
Abstract ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus voltage and temperature ($I-V-T$) characteristics, the deep-level transient spectroscopy (DLTS) and the photoluminescence (PL) spectra of the samples were measured. DLTS shows two deep-level centres of $E_1$ ($E_{\rm C}$--0.13$\pm $0.02\,eV) and $E_2$ ($E_{\rm C}$--0.43$\pm $0.05 eV) in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at $E_{\rm C}$--0.13$\pm $0.01 eV was also obtained from the $I-T$ characteristics. It was considered to be the same as $E_1$ obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of $E_1$ was varied when the total gas flow rate was changed.
Received: 08 June 2007
Revised: 28 January 2008
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of
China (Grant Nos 50472009, 10474091 and 50532070).
Cite this article:
Liu Ci-Hui(刘磁辉), Liu Bing-Ce(刘秉策), and Fu Zhu-Xi(付竹西) Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition 2008 Chin. Phys. B 17 2292
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