Oxidation of silicon surface with atomic oxygen radical anions
Wang Lian(王莲)a), Song Chong-Fu(宋崇富)a), Sun Jian-Qiu(孙剑秋)a), Hou Ying(侯莹)b), Li Xiao-Guang(李晓光)b), and Li Quan-Xin(李全新)a)†
a Department of Chemical Physics, University of Science & Technology of China, Hefei 230026, China; b Department of Physics, University of Science & Technology of China, Hefei 230026, China
Abstract The surface oxidation of silicon (Si) wafers by atomic oxygen radical anions (O- anions) and the preparation of metal--oxide--semiconductor (MOS) capacitors on the O--oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al28O64]4+$\cdot$4O- (C12A7-O- for short). After it has been irradiated by an O- anion beam (0.5$\mu$ A/cm2) at 300℃ for 1--10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32nm. X-ray photoelectron spectroscopy (XPS) results reveal that the oxide layer is of a mixture of SiO2, Si2O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of <Al electrode/SiOx/Si> are investigated by measuring capacitance-voltage (C-V) and current-voltage (I-V) curves. The oxide charge density is about 6.0 $\times$ 1011cm2 derived from the C-V curves. The leakage current density is in the order of 10-6A/cm2 below 4MV/cm, obtained from the $I-V$ curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.
Received: 19 September 2007
Revised: 09 December 2007
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 50772107) and the
National High Technology Development Program of China (Grant No
2006AA05Z118).
Cite this article:
Wang Lian(王莲), Song Chong-Fu(宋崇富), Sun Jian-Qiu(孙剑秋), Hou Ying(侯莹), Li Xiao-Guang(李晓光), and Li Quan-Xin(李全新) Oxidation of silicon surface with atomic oxygen radical anions 2008 Chin. Phys. B 17 2197
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