Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes
Zhang Yang(张杨)a)†, Han Chun-Lin(韩春林)b), Gao Jian-Feng(高建峰)b),Zhu Zhan-Ping(朱战平)a), Wang Bao-Qiang(王保强)a), and Zeng Yi-Ping(曾一平)a)
a Novel Materials laboratory，Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China; b State Key laboratory of Monolithic Integrated Circuit and Modules, Nanjing Electronic Devices Institute, CETC, Nanjing 210016, China
Abstract This paper investigates the dependence of current--voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes (RTDs) on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance (NDR) region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.
Received: 06 June 2007
Revised: 29 August 2007
Accepted manuscript online:
(Junction breakdown and tunneling devices (including resonance tunneling devices))
Cite this article:
Zhang Yang(张杨), Han Chun-Lin(韩春林), Gao Jian-Feng(高建峰), Zhu Zhan-Ping(朱战平), Wang Bao-Qiang(王保强), and Zeng Yi-Ping(曾一平) Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 2008 Chin. Phys. B 17 1472
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