Chin. Phys. B
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Chin. Phys. B  2008, Vol. 17 Issue (4): 1472-1474    DOI: 10.1088/1674-1056/17/4/054
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes
Zhang Yanga, Zhu Zhan-Pinga, Wang Bao-Qianga, Zeng Yi-Pinga, Han Chun-Linb, Gao Jian-Fengc
a Novel Materials laboratory,Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China; b State Key laboratory of Monolithic Integrated Circuit and Modules, Nanjing Electronic Devices Institute, CETC, Nanjing 210016, China; c State Key laboratory of Monolithic Integrated Circuit and Modules, Nanjing Electronic Devices Institute, CETC, Nanjing 210016, China

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