Abstract This paper reports that $\beta$-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si(111) substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction, Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown $\beta$-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100nm to 200 nm and lengths typically up to 2$\mu$m. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.
Received: 11 October 2007
Revised: 11 December 2007
Accepted manuscript online:
Fund: Project supported
by the State Key Program of the National Natural Science Foundation
of China (Grant No 90201025).
Cite this article:
Wang Gong-Tang(王公堂), Xue Cheng-Shan(薛成山), and Yang Zhao-Zhu(杨兆柱)
Growth of $\beta$-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate
2008 Chin. Phys. B 17 1326
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