Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/ In0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy
Gao Hong-Ling(高宏玲)a)†, Zeng Yi-Ping(曾一平)a), Wang Bao-Qiang(王宝强)a), Zhu Zhan-Ping(朱战平)a), and Wang Zhan-Guo(王占国)b)
aNovel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing rm 100083, China; bKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (MBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm$^{2}$/(V$\cdot$s) and 3.26$\times $10$^{12}$cm$^{ - 2}$ respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In$_{0.53}$Ga$_{0.47}$As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.
Received: 08 August 2007
Revised: 08 October 2007
Accepted manuscript online:
(Molecular, atomic, ion, and chemical beam epitaxy)
Cite this article:
Gao Hong-Ling(高宏玲), Zeng Yi-Ping(曾一平), Wang Bao-Qiang(王宝强), Zhu Zhan-Ping(朱战平), and Wang Zhan-Guo(王占国) Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/ In0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy 2008 Chin. Phys. B 17 1119
[1]
Strain compensated type II superlattices grown by molecular beam epitaxy Chao Ning(宁超), Tian Yu(于天), Rui-Xuan Sun(孙瑞轩), Shu-Man Liu(刘舒曼), Xiao-Ling Ye(叶小玲), Ning Zhuo(卓宁), Li-Jun Wang(王利军), Jun-Qi Liu(刘俊岐), Jin-Chuan Zhang(张锦川), Shen-Qiang Zhai(翟慎强), and Feng-Qi Liu(刘峰奇). Chin. Phys. B, 2023, 32(4): 046802.
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
