A new physics-based self-heating effect model for 4H-SiC MESFETs
Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
Key Lab of Education Ministry for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and in-complete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I-V curves with the self-heating effect is obtained.
Received: 12 November 2007
Revised: 17 July 2008
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National
Defense Foundation of China (Grant No 51327010101) and the National
Natural Science Foundation of China (Grant No 60606022).
Cite this article:
Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) A new physics-based self-heating effect model for 4H-SiC MESFETs 2008 Chin. Phys. B 17 4622
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