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Chin. Phys. B, 2008, Vol. 17(10): 3902-3906    DOI: 10.1088/1674-1056/17/10/057
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Growth of Mn5Ge3 ultrathin film on Ge(111)

Chen Li-Jun(陈立军), Wang De-Yong(王德勇), Zhan Qing-Feng(詹清峰), He Wei(何为), Li Qing-An(李庆安), and Cheng Zhao-Hua(成昭华)
State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  The growth of Mn$_{5}$Ge$_{3}$ ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a ($\sqrt 3\times \sqrt 3$) R$30^\circ$ surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the $T^{2}$-dependent behaviour is observed to remain up to 220 K.
Keywords:  Mn$_{5}$Ge$_{3}$      magnetic semiconductors      scanning tunnelling microscopy      solid phase epitaxy  
Received:  08 January 2008      Revised:  18 March 2008      Accepted manuscript online: 
PACS:  81.15.Np (Solid phase epitaxy; growth from solid phases)  
  75.70.Ak (Magnetic properties of monolayers and thin films)  
  68.55.-a (Thin film structure and morphology)  
  75.50.Pp (Magnetic semiconductors)  
  68.35.B- (Structure of clean surfaces (and surface reconstruction))  
  75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.))  

Cite this article: 

Chen Li-Jun(陈立军), Wang De-Yong(王德勇), Zhan Qing-Feng(詹清峰), He Wei(何为), Li Qing-An(李庆安), and Cheng Zhao-Hua(成昭华) Growth of Mn5Ge3 ultrathin film on Ge(111) 2008 Chin. Phys. B 17 3902

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