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Chin. Phys. B, 2008, Vol. 17(1): 307-310    DOI: 10.1088/1674-1056/17/1/054
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

Guo Xia(郭霞) and Shen Guang-Di(沈光地)
Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
Abstract  The scalability of the tunnel-regenerated multi-active-region (TRMAR) structure has been investigated for the application in light-emitting diodes (LEDs). The use of the TRMAR structure was proved theoretically to have unique advantages over conventional single-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.
Keywords:  scalability      tunnel junction      regeneration  
Accepted manuscript online: 
PACS:  85.60.Jb (Light-emitting devices)  
Fund: Project supported by the National Basic Research Program of China (Grant No 2006CB604902), the National High Technology Development Program of China (Grant No 2006AA03A121), the National Natural Science Foundation of China (Grant No 60506012), Beijing Nat

Cite this article: 

Guo Xia(郭霞) and Shen Guang-Di(沈光地) The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure 2008 Chin. Phys. B 17 307

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