Abstract Radiation effects of the floating gate read-only-memory (FG ROM) and the static random access memory (SRAM) have been evaluated using the 14 MeV neutron and 31.9MeV proton beams and Co-60 $\gamma $-rays. The neutron fluence, when the first error occurs in the FG ROMs, is at least 5 orders of magnitude higher than that in the SRAMs, and the proton fluence, 4 orders of magnitude higher. The total dose threshold for Co-60 $\gamma $-ray irradiation is about 10$^{4}$ rad (Si) for both memories. The difference and similarity are attributed to the structure of the memory cells and the mechanism of radiation effects. It is concluded that the FG ROMs are more reliable as semiconductor memories for storing data than the SRAMs, when they are used in the satellites or space crafts exposed to high energy particle radiation.
Received: 23 November 2006
Revised: 09 February 2007
Accepted manuscript online:
Fund: Project
supported by the Program for New Century Excellent Talents in University,
China (Grant No~NCET-04-0926).
Cite this article:
He Chao-Hui(贺朝会) and Li Yong-Hong(李永宏) Experimental study on radiation effects in floating gate read-only-memories and static random access memories 2007 Chinese Physics 16 2773
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