Chin. Phys. B
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Chin. Phys.  2007, Vol. 16 Issue (8): 2475-2478    DOI: 10.1088/1009-1963/16/8/053
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Si1Sb2Te3 phase change material for chalcogenide random access memory
Song Zhi-Tanga, Liu Boa, Liu Wei-Lia, Feng Song-Lina, Zhang Tingb, Chen Bomyc
a Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; b Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate School of the Chinese Academic of Sciences, Beijing 100049, China; c Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086 U.S.A.

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