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Chinese Physics, 2007, Vol. 16(8): 2310-2314    DOI: 10.1088/1009-1963/16/8/025
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Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy

Yu Wei(于威), Wang Chun-Sheng(王春生), Lu Wan-Bing(路万兵), He Jie(何杰), Han Xiao-Xia(韩晓霞), and Fu Guang-Sheng(傅广生)
College of Physical Science and Technology, Hebei University, Baoding 071002, China
Abstract  In this paper, surface photovoltage spectroscopy (SPS) is used to determine the electronic structure of the hydrogenated transition Si films. All samples are prepared by using helicon wave plasma-enhanced chemical vapour deposition technique, the films exhibit a transition from the amorphous phase to the microcrystalline phase with increasing temperature. The film deposited at lower substrate temperature has the amorphous-like electronic structure with two types of dominant defect states corresponding to the occupied Si dangling bond states (D0/D- and the empty Si dangling states (D+). At higher substrate temperature, the crystallinity of the deposited films increases, while their band gap energy decreases. Meanwhile, two types of additional defect states is incorporate into the films as compared with the amorphous counterpart, which is attributed to the interface defect states between the microcrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples deposited above 300℃ increases first and decreases afterwards, which may be interpreted as a result of the competition between hydrogen release and crystalline grain size increment with increasing substrate temperature.
Keywords:  microcrystalline silicon      defect states      surface photovoltaic spectroscopy  
Received:  04 August 2006      Revised:  12 December 2006      Accepted manuscript online: 
PACS:  71.20.Mq (Elemental semiconductors)  
  61.43.Dq (Amorphous semiconductors, metals, and alloys)  
  71.55.Cn (Elemental semiconductors)  
  73.50.Pz (Photoconduction and photovoltaic effects)  
  73.61.Cw (Elemental semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
Fund: Project supported by the Natural Foundation of Hebei province, People's Republic of China (Grant No 503129).

Cite this article: 

Yu Wei(于威), Wang Chun-Sheng(王春生), Lu Wan-Bing(路万兵), He Jie(何杰), Han Xiao-Xia(韩晓霞), and Fu Guang-Sheng(傅广生) Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy 2007 Chinese Physics 16 2310

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