Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy
Qiu Kai(邱凯)†,Zhong Fei(钟飞), Li Xin-Hua(李新化), Yin Zhi-Jun(尹志军), Ji Chang-Jian(姬长建), Han Qi-Feng(韩奇峰), Chen Jia-Rong(陈家荣), Cao Xian-Cun(曹先存), and Wang Yu-Qi(王玉琦)
Key Laboratory of Materials Physics, Institute of Solid State Physics,Chinese Academy of Sciences, Heifei 230031, China
Abstract This paper reports on N-, mixed-, and Ga-polarity buffer layers are grown by molecular beam epitaxy (MBE) on sapphire (0001) substrates, with the GaN thicker films grown on the buffer layer with different polarity by hydride vapour epitaxy technique (HVPE). The surface morphology, structural and optical properties of these HVPE-GaN epilayers are characterized by wet chemical etching, scanning electron microscope, x-ray diffraction, and photoluminescence spectrum respectively. It finds that the N-polarity film is unstable against the higher growth temperature and wet chemical etching, while that of GaN polarity one is stable. The results indicate that the crystalline quality of HVPE-GaN epilayers depends on the polarity of buffer layers.
Received: 23 November 2006
Revised: 26 December 2006
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 10574130).
Cite this article:
Qiu Kai(邱凯),Zhong Fei(钟飞), Li Xin-Hua(李新化), Yin Zhi-Jun(尹志军), Ji Chang-Jian(姬长建), Han Qi-Feng(韩奇峰), Chen Jia-Rong(陈家荣), Cao Xian-Cun(曹先存), and Wang Yu-Qi(王玉琦) Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy 2007 Chinese Physics 16 2082
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