Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers
Wang Fei-Fei(王菲菲)a), Cao Li(曹立)a), Liu Rui-Bin(刘瑞斌)a), Pan An-Lian(潘安练)a), and Zou Bing-Suo(邹炳锁)a) b) †
a Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b Micro--Nano Technologies Research Center, Hunan University, Changsha 410082, China
Abstract A simplified n-ZnO/p-Si heterojunction has been prepared by growing n-type ZnO rods on p-type silicon wafer through the chemical vapour deposition method. The reflectance spectrum of the sample shows an independent absorption peak at 384 nm, which may be originated from the bound states at the junction. In the photoluminescence spectrum a new emission band is shown at 393 nm, besides the bandedge emission at 380 nm. The electroluminescence spectrum of the n-ZnO/p-Si heterojunction shows a stable yellow luminescence band centred at 560 nm，which can be attributed to the emission from trapped states. Another kind of discrete ZnO rod has also been prepared on such silicon wafer and is encapsulated with carbonated polystyrene for electroluminescence detection. This composite structure shows a weak ultraviolet electroluminescence band at 395 nm and a yellow electroluminescence band. These data prove that surface modification which blocks the transverse movement of carriers between neighbouring nanorods plays important roles in the ultraviolet emission of ZnO nanorods. These findings are vital for future display device design.
Received: 26 October 2006
Revised: 29 December 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China
(Grant No 20173073), National 973
Project (Grant No 2002CB713802), Nano- and Bio-device Key Project of CAS,
985 Project of Hunan University.
Cite this article:
Wang Fei-Fei(王菲菲), Cao Li(曹立), Liu Rui-Bin(刘瑞斌), Pan An-Lian(潘安练), and Zou Bing-Suo(邹炳锁) Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers 2007 Chinese Physics 16 1790
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