Chin. Phys. B
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Chin. Phys.  2007, Vol. 16 Issue (6): 1757-1763    DOI: 10.1088/1009-1963/16/6/047
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Lai Pui-Toa, Ji Fengb, Xu Jing-Pingb
a Department of Electrical & Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China; b Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China

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