Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress
Liu Hong-Xia(刘红侠)†, Li Zhong-He(李忠贺), and Hao Yue(郝跃)
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract Degradation characteristics of PMOSFETs under negative bias temperature--positive bias temperature--negative bias temperature (NBT--PBT--NBT) stress conditions are investigated in this paper. It is found that for all device parameters, the threshold voltage has the largest shift under the first NBT stress condition. When the polarity of gate voltage is changed to positive, the shift of device parameters can be greatly recovered. However, this recovery is unstable. The more severe degradation appears soon after reapplication of NBT stress condition. The second NBT stress causes in linear drain current to degrade greatly, which is different from that of the first NBT stress. This more severe parameter shift results from the wear out of silicon substrate and oxide interface during the first NBT and PBT stress due to carrier trapping/detrapping and hydrogen related species diffusion.
Received: 20 September 2006
Revised: 18 October 2006
Accepted manuscript online:
PACS:
85.30.De
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60206006), the Program
for New Century Excellent Talents of Ministry of Education of China
(Grant No 681231366), the National Defense Pre-Research Foundation
of China (Grant N
Cite this article:
Liu Hong-Xia(刘红侠), Li Zhong-He(李忠贺), and Hao Yue(郝跃) Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress 2007 Chinese Physics 16 1445
Recovery of PMOSFET NBTI under different conditions Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2015, 24(9): 097304.
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