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Chinese Physics, 2007, Vol. 16(5): 1417-1421    DOI: 10.1088/1009-1963/16/5/041
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Electrical and optical characteristics of vanadium in 4H-SiC

Wang Chao(王超), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract  A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650℃. The resistivity at room temperature is as high as 7.6×106$\Omega\cdot$cm. Significant redistribution of vanadium is not observed even after 1650℃ annealing. Temperature-dependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about EC-1.1eV.
Keywords:  semi-insulating 4H-SiC      vanadium ion implantation      annealing      activation energy  
Received:  16 September 2006      Revised:  27 October 2006      Accepted manuscript online: 
PACS:  73.61.Le (Other inorganic semiconductors)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  68.60.Dv (Thermal stability; thermal effects)  
  71.55.Ht (Other nonmetals)  
  78.66.Li (Other semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60376001), the National Basic Research Program of China (Grant No 2002CB311904) and the National Defense Basic Research Program of China (Grant No 51327020202).

Cite this article: 

Wang Chao(王超), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) Electrical and optical characteristics of vanadium in 4H-SiC 2007 Chinese Physics 16 1417

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