Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers
Han Pei-Gao(韩培高), Ma Zhong-Yuan(马忠元)†, Xia Zheng-Yue(夏正月), Chen De-Yuan(陈德媛), Xu Jun (徐骏), Qian Bo(钱波), Chen San(陈三), Li Wei (李伟), Huang Xin-Fan(黄信凡), Chen Kun-Ji(陈坤基), and Feng Duan(冯端)
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Abstract Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773nm and 863nm, respectively. It is found that the PL band centred at 863nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL band centred at 773nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.
Received: 20 July 2006
Revised: 21 November 2006
Accepted manuscript online:
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
Fund: Project supported by the Natural
Science Foundation of Jiangsu Province, China (Grant No BK 2004410),
the National Natural Science Foundation of China (Grant Nos
60508009, 90301009, 60471021 and 60571008), and the State Key
Program for Basic Research of C
Cite this article:
Han Pei-Gao(韩培高), Ma Zhong-Yuan(马忠元), Xia Zheng-Yue(夏正月), Chen De-Yuan(陈德媛), Xu Jun (徐骏), Qian Bo(钱波), Chen San(陈三), Li Wei (李伟), Huang Xin-Fan(黄信凡), Chen Kun-Ji(陈坤基), and Feng Duan(冯端) Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers 2007 Chinese Physics 16 1410
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