The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector
Zhang Yi-Men(张义门)†, Zhou Yong-Hua(周拥华), and Zhang Yu-Ming(张玉明)
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in the range from 300K to 900K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.
Received: 22 August 2006
Revised: 25 September 2006
Accepted manuscript online:
PACS:
85.60.Gz
(Photodetectors (including infrared and CCD detectors))
(Optoelectronic device characterization, design, and modeling)
Fund: Project
supported by the National Basic Research Program of China (Grant No
2002CB311904).
Cite this article:
Zhang Yi-Men(张义门), Zhou Yong-Hua(周拥华), and Zhang Yu-Ming(张玉明) The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector 2007 Chinese Physics 16 1276
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