Polymer thin-film transistor based on a high dielectric constant gate insulator
Lü Wen(吕文)a), Peng Jun-Biao(彭俊彪)a)†, Yang Kai-Xia(杨开霞)a), Lan Lin-Feng(兰林峰)a), Niu Qiao-Li(牛巧利), and Cao Yong(曹镛)b)
a Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; b Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
Abstract In this paper full polymer thin-film transistors (PTFTs) based on Poly (acrylonitrile) (PAN) as the gate dielectric and poly (2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer (6.27) can remarkably reduce the threshold voltage of the transistors to below -3V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8×10-4cm2/Vs, and on/off current ratio was larger than 102, which was comparable with that of transistors with widely used Poly (4-vinyl phenol) (PVP) or SiO2 as gate dielectrics.
Received: 09 August 2006
Revised: 21 August 2006
Accepted manuscript online:
Fund: Project support by the National
``973'' Project of China (Grant No 2002CB613405), the National
Natural Science Foundation of China (Grant Nos 50573024, 50433030
and 20505020), the Key Project of Chinese
Ministry of Education (Grant No 104208).
Cite this article:
Lü Wen(吕文), Peng Jun-Biao(彭俊彪), Yang Kai-Xia(杨开霞), Lan Lin-Feng(兰林峰), Niu Qiao-Li(牛巧利), and Cao Yong(曹镛) Polymer thin-film transistor based on a high dielectric constant gate insulator 2007 Chinese Physics 16 1145
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