Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD
Hou Guo-Fu(侯国付)a)b)c)†, Xue Jun-Ming(薛俊明)a)b)c), Guo Qun-Chao(郭群超)a)b)c), Sun Jian(孙建)a)b)c), Zhao Ying(赵颖)a)b)c), Geng Xin-Hua(耿新华)a)b)c), and Li Yi-Gang(李乙钢)d)
a Institute of Photoelectronics, Nankai University, Tianjin 300071, Chinab Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Tianjin 300071, Chinac Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministry of Education, Tianjin 300071, China; b Institute of Physics, Nankai University, Tianjin 300071, China
Abstract The incubation layers in microcrystalline silicon films ($\mu$c-Si:H) are studied in detail. The incubation layers in $\mu$c-Si:H films are investigated by bifacial Raman spectra, and the results indicate that either decreasing silane concentration (SC) or increasing plasma power can reduce the thickness of incubation layer. The analysis of the in-situ diagnosis by plasma optical emission spectrum (OES) shows that the emission intensities of the SiH*(412 nm) and H$_{\alpha}$ (656nm) lines are time-dependent, thus SiH*/H$_{\alpha}$ ratio is of temporal evolution. The variation of SiH*/H$_{\alpha}$ ratio can indicate the variation in relative concentration of precursor and atomic hydrogen in the plasma. And the atomic hydrogen plays a crucial role in the formation of $\mu$c-Si:H; thus, with the plasma excited, the temporal-evolution SiH*/H$_{\alpha}$ ratio has a great influence on the formation of an incubation layer in the initial growth stage. The fact that decreasing the SC or increasing the plasma power can decrease the SiH*/H$_{\alpha}$ ratio is used to explain why the thickness of incubation layer can reduce with decreasing the SC or increasing the plasma power.
Received: 23 December 2005
Revised: 09 August 2006
Accepted manuscript online:
Fund: Project supported by the State Key Development
Program for Basic Research of China (Grant Nos 2006CB202602 and 2006CB202603),
the Starting Project of Nankai University (Grant No J02033) and the Key Laboratory
of Optoelectronic Information Technical Science, Ministry of Education
(Grant No 2005-18), and the Key Project of Tianjin Municipal Science and
Technology Commission (Grant No 043186511).
Cite this article:
Hou Guo-Fu(侯国付), Xue Jun-Ming(薛俊明), Guo Qun-Chao(郭群超), Sun Jian(孙建), Zhao Ying(赵颖), Geng Xin-Hua(耿新华), and Li Yi-Gang(李乙钢) Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD 2007 Chinese Physics 16 553
Influence of Boron doping on microcrystalline silicon growth Li Xin-Li(李新利), Chen Yong-Sheng(陈永生), Yang Shi-E(杨仕娥), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), Gao Xiao-Yong(郜小勇), Li Rui(李瑞), Jiao Yue-Chao(焦岳超), Gao Hai-Bo(高海波), and Wang Guo(王果) . Chin. Phys. B, 2011, 20(9): 096801.
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