Chin. Phys. B
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Chin. Phys.  2007, Vol. 16 Issue (2): 529-532    DOI: 10.1088/1009-1963/16/2/040
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Lai Pui-Toa, Chan Chu-Loka, Xu Jing-Pingb, Chen Wei-Bingc, Li Yan-Pingc
a Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China ; b Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China; c Department of Electronic Science \& Technology, Huazhong University of Science and Technology, Wuhan 430074, China

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