Improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment
Qian Xiao-Mei(钱晓梅)a), Wei Yong-Xia(卫永霞)a), Yu Xiao-Zhu(俞笑竹)a), Ye Chao(叶超)a), Ning Zhao-Yuan(宁兆元)a), and Liang Rong-Qing(梁荣庆)b)
a School of Physics Science and Technology, Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China; b Institute of Modern Physics, Fudan University, Shanghai 200433, China
Abstract This paper investigates the effect of O2 plasma treatment on the electric property of Cu/SiCOH low dielectric constant (low-k) film integrated structure. The results show that the leakage current of Cu/SiCOH low-k integrated structure can be reduced obviously at the expense of a slight increase in dielectric constant k of SiCOH films. By the Fourier transform infrared (FTIR) analysis on the bonding configurations of SiCOH films treated by O2 plasma, it is found that the decrease of leakage current is related to the increase of Si-O cages originating from the linkage of Si dangling bonds through O, which makes the open pores sealed and reduces the diffusion of Cu to pores.
Received: 17 July 2006
Revised: 16 August 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10575074), the Specialized Research Fund for the Doctoral Program of Higher Education of China and the Foundation of Key Laboratory of Thin Films, Jiangsu Province, China.
Cite this article:
Qian Xiao-Mei(钱晓梅), Wei Yong-Xia(卫永霞), Yu Xiao-Zhu(俞笑竹), Ye Chao(叶超), Ning Zhao-Yuan(宁兆元), and Liang Rong-Qing(梁荣庆) Improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment 2007 Chinese Physics 16 524
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