Please wait a minute...
Chinese Physics, 2007, Vol. 16(12): 3827-3831    DOI: 10.1088/1009-1963/16/12/045
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Determination of conduction band edge characteristics of strained Si/Si1-xGex

Song Jian-Jun(宋建军), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), and Xuan Rong-Xi(宣荣喜)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  The feature of conduction band (CB) of Tensile-Strained Si(TS-Si) on a relaxed Si$_{1 - x}$Ge$_{x}$ substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent CB edge energy extrema is presented; Using the K$\cdot$P method with the help of perturbation theory, dispersion relation near minima of CB bottom energy, derived from the linear deformation potential theory, is determined, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses ($m_{\rm l}^{\ast }$ and $m_{\rm t}^{\ast })$ are obtained.
Keywords:  strained Si/Si$_{1 - x}$Ge$_{x}$      conduction-band      K$\cdot$P method  
Accepted manuscript online: 
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  71.15.-m (Methods of electronic structure calculations)  
  71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor)  
Fund: Project supported by the National Defence Pre-research Foundation of China (Grant Nos~51308040203 and 51408061105DZ0171).

Cite this article: 

Song Jian-Jun(宋建军), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), and Xuan Rong-Xi(宣荣喜) Determination of conduction band edge characteristics of strained Si/Si1-xGex 2007 Chinese Physics 16 3827

[1] Chiral symmetry protected topological nodal superconducting phase and Majorana Fermi arc
Mei-Ling Lu(卢美玲), Yao Wang(王瑶), He-Zhi Zhang(张鹤之), Hao-Lin Chen(陈昊林), Tian-Yuan Cui(崔天元), and Xi Luo(罗熙). Chin. Phys. B, 2023, 32(2): 027301.
[2] Effects of preparation parameters on growth and properties of β-Ga2O3 film
Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
[3] Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN2CSCl MXene
Yezhu Lv(吕叶竹), Peiji Wang(王培吉), and Changwen Zhang(张昌文). Chin. Phys. B, 2022, 31(12): 127303.
[4] Observation of multiple charge density wave phases in epitaxial monolayer 1T-VSe2 film
Junyu Zong(宗君宇), Yang Xie(谢阳), Qinghao Meng(孟庆豪), Qichao Tian(田启超), Wang Chen(陈望), Xuedong Xie(谢学栋), Shaoen Jin(靳少恩), Yongheng Zhang(张永衡), Li Wang(王利), Wei Ren(任伟), Jian Shen(沈健), Aixi Chen(陈爱喜), Pengdong Wang(王鹏栋), Fang-Sen Li(李坊森), Zhaoyang Dong(董召阳), Can Wang(王灿), Jian-Xin Li(李建新), and Yi Zhang(张翼). Chin. Phys. B, 2022, 31(10): 107301.
[5] Hexagonal boron phosphide and boron arsenide van der Waals heterostructure as high-efficiency solar cell
Yi Li(李依), Dong Wei(魏东), Gaofu Guo(郭高甫), Gao Zhao(赵高), Yanan Tang(唐亚楠), and Xianqi Dai(戴宪起). Chin. Phys. B, 2022, 31(9): 097301.
[6] Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[7] Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation
Jiahao Yuan(袁嘉浩), Mengzhou Liao(廖梦舟), Zhiheng Huang(黄智恒), Jinpeng Tian(田金朋), Yanbang Chu(褚衍邦), Luojun Du(杜罗军), Wei Yang(杨威), Dongxia Shi(时东霞), Rong Yang(杨蓉), and Guangyu Zhang(张广宇). Chin. Phys. B, 2022, 31(8): 087302.
[8] Tunable anharmonicity versus high-performance thermoelectrics and permeation in multilayer (GaN)1-x(ZnO)x
Hanpu Liang(梁汉普) and Yifeng Duan(段益峰). Chin. Phys. B, 2022, 31(7): 076301.
[9] Anisotropic refraction and valley-spin-dependent anomalous Klein tunneling in a 1T'-MoS2-based p-n junction
Fenghua Qi(戚凤华) and Xingfei Zhou(周兴飞). Chin. Phys. B, 2022, 31(7): 077301.
[10] Interfacial defect engineering and photocatalysis properties of hBN/MX2 (M = Mo, W, and X = S, Se heterostructures
Zhi-Hai Sun(孙志海), Jia-Xi Liu(刘佳溪), Ying Zhang(张颖), Zi-Yuan Li(李子源), Le-Yu Peng(彭乐宇), Peng-Ru Huang(黄鹏儒), Yong-Jin Zou(邹勇进), Fen Xu(徐芬), and Li-Xian Sun(孙立贤). Chin. Phys. B, 2022, 31(6): 067101.
[11] Light-modulated electron retroreflection and Klein tunneling in a graphene-based n-p-n junction
Xingfei Zhou(周兴飞), Ziying Wu(吴子瀛), Yuchen Bai(白宇晨), Qicheng Wang(王起程), Zhentao Zhu(朱震涛), Wei Yan(闫巍), and Yafang Xu(许亚芳). Chin. Phys. B, 2022, 31(4): 047301.
[12] Topological properties of Sb(111) surface: A first-principles study
Shuangxi Wang(王双喜) and Ping Zhang(张平). Chin. Phys. B, 2022, 31(4): 047105.
[13] Spin—orbit stable dirac nodal line in monolayer B6O
Wen-Rong Liu(刘文荣), Liang Zhang(张亮), Xiao-Jing Dong(董晓晶), Wei-Xiao Ji(纪维霄), Pei-Ji Wang(王培吉), and Chang-Wen Zhang(张昌文). Chin. Phys. B, 2022, 31(3): 037305.
[14] First principles study on geometric and electronic properties of two-dimensional Nb2CTx MXenes
Guoliang Xu(徐国亮), Jing Wang(王晶), Xilin Zhang(张喜林), and Zongxian Yang(杨宗献). Chin. Phys. B, 2022, 31(3): 037304.
[15] Determination of the surface states from the ultrafast electronic states in a thermoelectric material
Tongyao Wu(吴桐尧), Hongyuan Wang(王洪远), Yuanyuan Yang(杨媛媛), Shaofeng Duan(段绍峰), Chaozhi Huang(黄超之), Tianwei Tang(唐天威), Yanfeng Guo(郭艳峰), Weidong Luo(罗卫东), and Wentao Zhang(张文涛). Chin. Phys. B, 2022, 31(2): 027902.
No Suggested Reading articles found!