Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology
Li Dong-Mei(李冬梅)a)† , Wang Zhi-Hua(王志华)b), Huangfu Li-Ying(皇甫丽英)a), and Gou Qiu-Jing(勾秋静)a)
a Department of Electronic Engineering, Tsinghua University, Beijing 100084, China; b Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Abstract This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after $\gamma $-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.
Fund: Project supported by the
National Natural Science Foundation of China (Grant No~6037202/F010204).
Cite this article:
Li Dong-Mei(李冬梅), Wang Zhi-Hua(王志华), Huangfu Li-Ying(皇甫丽英), and Gou Qiu-Jing(勾秋静), Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology 2007 Chinese Physics 16 3760
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