Please wait a minute...
Chinese Physics, 2007, Vol. 16(12): 3566-3570    DOI: 10.1088/1009-1963/16/12/003
GENERAL Prev   Next  

Evolutionary snowdrift game with disordered environments in mobile societies

Guan Jian-Yue(关剑月),Wu Zhi-Xi(吴枝喜), and Wang Ying-Hai(汪映海)
Institute of Theoretical Physics, Lanzhou University, Lanzhou 730000, China
Abstract  We investigate an evolutionary snowdrift game on a square $N=L\times L$ lattice with periodic boundary conditions, where a population of $n_{0}$ ($n_{0}\leq N$) players located on the sites of this lattice can either cooperate with or defect from their nearest neighbours. After each generation, every player moves with a certain probability $p$ to one of the player's nearest empty sites. It is shown that, when $p=0$, the cooperative behaviour can be enhanced in disordered structures. When $p>0$, the effect of mobility on cooperation remarkably depends on the payoff parameter $r$ and the density of individuals $\rho$ ($\rho=n_{0}/N$). Compared with the results of $p=0$, for small $r$, the persistence of cooperation is enhanced at not too small values of $\rho$; whereas for large $r$, the introduction of mobility inhibits the emergence of cooperation at any $\rho<1$; for the intermediate value of $r$, the cooperative behaviour is sometimes enhanced and sometimes inhibited, depending on the values of $p$ and $\rho$. In particular, the cooperator density can reach its maximum when the values of $p$ and $\rho$ reach their respective optimal values. In addition, two absorbing states of all cooperators and all defectors can emerge respectively for small and large $r$ in the case of $p>0$.
Keywords:  snowdrift game      disorderd lattice      mobility      cooperation  
Accepted manuscript online: 
PACS:  02.50.Le (Decision theory and game theory)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10775060).

Cite this article: 

Guan Jian-Yue(关剑月), Wu Zhi-Xi(吴枝喜), and Wang Ying-Hai(汪映海) Evolutionary snowdrift game with disordered environments in mobile societies 2007 Chinese Physics 16 3566

[1] Current bifurcation, reversals and multiple mobility transitions of dipole in alternating electric fields
Wei Du(杜威), Kao Jia(贾考), Zhi-Long Shi(施志龙), and Lin-Ru Nie(聂林如). Chin. Phys. B, 2023, 32(2): 020505.
[2] Mobility edges generated by the non-Hermitian flatband lattice
Tong Liu(刘通) and Shujie Cheng(成书杰). Chin. Phys. B, 2023, 32(2): 027102.
[3] Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate
Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(6): 068501.
[4] Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model: Influence of quantum dot concentration
Pezhman Sheykholeslami-Nasab, Mahdi Davoudi-Darareh, and Mohammad Hassan Yousefi. Chin. Phys. B, 2022, 31(6): 068504.
[5] Maximum entropy mobility spectrum analysis for the type-I Weyl semimetal TaAs
Wen-Chong Li(李文充), Ling-Xiao Zhao(赵凌霄), Hai-Jun Zhao(赵海军),Gen-Fu Chen(陈根富), and Zhi-Xiang Shi(施智祥). Chin. Phys. B, 2022, 31(5): 057103.
[6] Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment
Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 057301.
[7] Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 058505.
[8] Invariable mobility edge in a quasiperiodic lattice
Tong Liu(刘通), Shujie Cheng(成书杰), Rui Zhang(张锐), Rongrong Ruan(阮榕榕), and Houxun Jiang(姜厚勋). Chin. Phys. B, 2022, 31(2): 027101.
[9] Interface modulated electron mobility enhancement in core-shell nanowires
Yan He(贺言), Hua-Kai Xu(许华慨), and Gang Ouyang(欧阳钢). Chin. Phys. B, 2022, 31(11): 110502.
[10] Electron delocalization enhances the thermoelectric performance of misfit layer compound (Sn1-xBixS)1.2(TiS2)2
Xin Zhao(赵昕), Xuanwei Zhao(赵轩为), Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然). Chin. Phys. B, 2022, 31(11): 117202.
[11] Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology
Yan-Fu Wang(王彦富), Bo Wang(王博), Rui-Ze Feng(封瑞泽), Zhi-Hang Tong(童志航), Tong Liu(刘桐), Peng Ding(丁芃), Yong-Bo Su(苏永波), Jing-Tao Zhou(周静涛), Feng Yang(杨枫), Wu-Chang Ding(丁武昌), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(1): 018502.
[12] Majorana zero modes, unconventional real-complex transition, and mobility edges in a one-dimensional non-Hermitian quasi-periodic lattice
Shujie Cheng(成书杰) and Xianlong Gao(高先龙). Chin. Phys. B, 2022, 31(1): 017401.
[13] Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch
Jia-Le Tang(唐家乐) and Chao Liu(刘超). Chin. Phys. B, 2022, 31(1): 018101.
[14] Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures
Yao Li(李姚) and Hong-Bin Pu(蒲红斌). Chin. Phys. B, 2021, 30(9): 097201.
[15] C band microwave damage characteristics of pseudomorphic high electron mobility transistor
Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇). Chin. Phys. B, 2021, 30(9): 098502.
No Suggested Reading articles found!