MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs
Cheng Zhi-Qun(程知群)a)b)†, Cai Yong(蔡勇)b), Liu Jie(刘杰)b), Zhou Yu-Gang(周玉刚)b), Lau Kei Mayb), and Chen J. Kevinb)
a Microelectronics CAD Center, Hangzhou Dianzi University, Hangzhou 310018, China; b Department of Electrical and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Abstract A microwave monolithic integrated circuit (MMIC) C-band low noise amplifier (LNA) using 1 $\mu $m-gate composite-channel Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.05}$Ga$_{0.95}$N/GaN high electron mobility transistors (CC-HEMTs) has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of --6 dB and an output return loss of --16 dB at 6 GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 $\mu $m $\times $ 100 $\mu $m device showed very high-dynamic range with decent gain and noise figure.
Accepted manuscript online:
PACS:
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Cheng Zhi-Qun(程知群), Cai Yong(蔡勇), Liu Jie(刘杰), Zhou Yu-Gang(周玉刚), Lau Kei May, and Chen J. Kevin MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs 2007 Chinese Physics 16 3494
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
