Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress
Chen Hai-Feng(陈海峰)†, Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), and Gong Xin(龚欣)
School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain (LDD) nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection (LGVHHI), gate-induced drain leakage induced hot-hole injection (GIDLIHHI) and substrate hot-hole injection (SHHI), have different influences on the devices damaged already by the previous hot electron injection (HEI) because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device's performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.
Received: 22 November 2006
Revised: 08 February 2007
Accepted manuscript online:
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Fund: Project
supported by the National Natural Science Foundation of China (Grant
No 60376024).
Cite this article:
Chen Hai-Feng(陈海峰), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), and Gong Xin(龚欣) Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress 2007 Chinese Physics 16 3114
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