Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

doi:10.1088/1009-1963/16/10/048

Abstract

Abstract Polycrystalline thick film of zinc oxide (ZnO) is grown on a unique silicon substrate with a hierarchical structure, silicon nanoporous pillar array (Si-NPA), by using a vapour phase transport method. It is found that as-grown ZnO film is composed of closely packed ZnO crystallites with an average size of $\sim$$10\mu$m. The film resistivity of ZnO/Si-NPA is measured to be $\sim$$8.9\Omega\cdot$cm by the standard four probe method. The lengthwise $I$-$V$ curve of ZnO/Si-NPA heterostructure is measured. Theoretical analysis shows that the carrier transport across ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a thermionic process at high voltages and a quantum tunnelling process at low voltages.

Keywords: silicon nanoporous pillar array (Si-NPA) ZnO/Si-NPA heterostructure thermionic process

Received: 31 January 2007
Revised: 04 February 2007
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	68.55.A-	(Nucleation and growth)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
	73.61.Ga	(II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No 10574112).

Cite this article:

Yao Zhi-Tao(姚志涛), Sun Xin-Rui(孙新瑞), Xu Hai-Jun(许海军), and Li Xin-Jian(李新建) Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array 2007 Chinese Physics 16 3108

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Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

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