Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation
Guo Hui(郭辉)†, Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)
Microelectronic School, Xidian University, Xi'an 710071, China, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract The Ti--Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance $\rho$c as low as 8.64×10-6$\Omega\cdot$ cm2 is achieved after annealing in N2 at 900℃ for 5 min. The sheet resistance Rsh of the implanted layers is 975$\Omega/\Box$. X-ray diffraction (XRD) analysis shows the formation of Ti-3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.
Received: 11 April 2006
Revised: 02 June 2006
Accepted manuscript online:
Fund: Project supported by the
National Basic Research Program of China (Grant No 2002CB311904), the
National Defense\linebreak
\makebox[1.6mm]{}Basic Research Program of China (Grant No 51327010101)
and the National Natural Science Foundation of China (Grant No\linebreak
\makebox[1.6mm]{}60376001).
Cite this article:
Guo Hui(郭辉), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation 2006 Chinese Physics 15 2142
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