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Chinese Physics, 2006, Vol. 15(7): 1621-1630    DOI: 10.1088/1009-1963/15/7/041
CROSS DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Critical area computation for real defects and arbitrary conductor shapes

Wang Jun-Ping (王俊平), Hao Yue (郝跃)
Microelectronics Institute, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  In current critical area models, it is generally assumed the defect outlines are circular and the conductors to be rectangle or the merger of rectangles. However, real defects and conductors associated with optimal layout design exhibit a great variety of shapes. Based on mathematical morphology, a new critical area model is presented, which can be used to estimate the critical area of short circuit, open circuit and pinhole. Based on the new model, the efficient validity check algorithms are explored to extract critical areas of short circuit, open circuit and pinhole from layouts. The results of experiment on an approximate layout of ${4\times 4}$ shifts register show that the new model predicts the critical areas accurately. These results suggest that the proposed model and algorithm could provide new approaches for yield prediction.
Keywords:  real defects      critical area model      mathematical morphology      yield estimation  
Received:  09 December 2005      Revised:  17 April 2006      Accepted manuscript online: 
PACS:  85.40.Bh (Computer-aided design of microcircuits; layout and modeling)  
  84.30.Sk (Pulse and digital circuits)  
  84.32.Ff (Conductors, resistors (including thermistors, varistors, and photoresistors))  
Fund: Project supported by the National High Technology Research and Development Program of China (Grant No 2003AA1Z163).

Cite this article: 

Wang Jun-Ping (王俊平), Hao Yue (郝跃) Critical area computation for real defects and arbitrary conductor shapes 2006 Chinese Physics 15 1621

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