Effect of substrate temperature and pressure on properties of microcrystalline silicon films
Wu Zhi-Meng (吴志猛)a, Lei Qing-Song (雷青松)a, Geng Xin-Hua (耿新华)b, Zhao Ying (赵颖)b, Sun Jian (孙建)b, Xi Jian-Ping (奚建平)a
a Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; b Institute of Optoelectronics, Nankai University, Tianjin 300071, China
Abstract In this paper intrinsic microcrystalline silicon films have been prepared by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) with different substrate temperature and pressure. The film properties were investigated by using Raman spectra, x-ray diffraction, scanning electron microscope (SEM), and optical transmittance measurements, as well as dark conductivity. Raman results indicate that increase of substrate temperature improves the microcrystallinity of the film. The crystallinity is improved when the pressure increases from 50Pa to 80Pa and the structure transits from microcrystalline to amorphous silicon for pressure higher than 80Pa. SEM reveals the effect of substrate temperature and pressure on surface morphology.
Received: 03 August 2005
Revised: 24 January 2006
Accepted manuscript online:
Wu Zhi-Meng (吴志猛), Lei Qing-Song (雷青松), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Sun Jian (孙建), Xi Jian-Ping (奚建平) Effect of substrate temperature and pressure on properties of microcrystalline silicon films 2006 Chinese Physics 15 1320
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