Please wait a minute...
Chinese Physics, 2006, Vol. 15(6): 1315-1319    DOI: 10.1088/1009-1963/15/6/030
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

Zhou Wang-Min (周旺民)ab, Wang Chong-Yu (王崇愚)bc, Chen Yong-Hai (陈涌海)d, Wang Zhan-Guo (王占国)d
a College of Mechanical & Electrical Engineering, Zhejiang University of Technology, Hangzhou 310032, Chinab Institute of Functional Materials, Central Iron & Steel Research Institute, Beijing 100081, China; c Department of Physics, Tsinghua University, Beijing 100084, China; d Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
Abstract  In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.
Keywords:  quantum dots      strain and stress distribution      strain energy      finite element method  
Received:  22 November 2005      Revised:  23 March 2006      Accepted manuscript online: 
PACS:  62.25.-g (Mechanical properties of nanoscale systems)  
  68.65.Hb (Quantum dots (patterned in quantum wells))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 90101004) and by the National Basic Research Program of China (Grant No G2000067102).

Cite this article: 

Zhou Wang-Min (周旺民), Wang Chong-Yu (王崇愚), Chen Yong-Hai (陈涌海), Wang Zhan-Guo (王占国) Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 2006 Chinese Physics 15 1315

[1] Adaptive genetic algorithm-based design of gamma-graphyne nanoribbon incorporating diamond-shaped segment with high thermoelectric conversion efficiency
Jingyuan Lu(陆静远), Chunfeng Cui(崔春凤), Tao Ouyang(欧阳滔), Jin Li(李金), Chaoyu He(何朝宇), Chao Tang(唐超), and Jianxin Zhong(钟建新). Chin. Phys. B, 2023, 32(4): 048401.
[2] Electron beam pumping improves the conversion efficiency of low-frequency photons radiated by perovskite quantum dots
Peng Du(杜鹏), Yining Mu(母一宁), Hang Ren(任航), Idelfonso Tafur Monroy, Yan-Zheng Li(李彦正), Hai-Bo Fan(樊海波), Shuai Wang(王帅), Makram Ibrahim, and Dong Liang(梁栋). Chin. Phys. B, 2023, 32(4): 048704.
[3] Thermoelectric signature of Majorana zero modes in a T-typed double-quantum-dot structure
Cong Wang(王聪) and Xiao-Qi Wang(王晓琦). Chin. Phys. B, 2023, 32(3): 037304.
[4] Ion migration in metal halide perovskite QLEDs and its inhibition
Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波). Chin. Phys. B, 2023, 32(1): 018507.
[5] Nonlinear optical rectification of GaAs/Ga1-xAlxAs quantum dots with Hulthén plus Hellmann confining potential
Yi-Ming Duan(段一名) and Xue-Chao Li(李学超). Chin. Phys. B, 2023, 32(1): 017303.
[6] High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance
Qian-Qian Gong(宫倩倩), Yun-Long Zhao(赵云龙), Qi Zhang(张奇), Chun-Yong Hu(胡春永), Teng-Fei Liu(刘腾飞), Hai-Feng Zhang(张海峰), Guang-Chao Yin(尹广超), and Mei-Ling Sun(孙美玲). Chin. Phys. B, 2022, 31(9): 098103.
[7] Large Seebeck coefficient resulting from chiral interactions in triangular triple quantum dots
Yi-Ming Liu(刘一铭) and Jian-Hua Wei(魏建华). Chin. Phys. B, 2022, 31(9): 097201.
[8] Dynamic transport characteristics of side-coupled double-quantum-impurity systems
Yi-Jie Wang(王一杰) and Jian-Hua Wei(魏建华). Chin. Phys. B, 2022, 31(9): 097305.
[9] Single-polarization single-mode hollow-core negative curvature fiber with nested U-type cladding elements
Qi-Wei Wang(王启伟), Shi Qiu(邱石), Jin-Hui Yuan(苑金辉), Gui-Yao Zhou(周桂耀), Chang-Ming Xia(夏长明), Yu-Wei Qu(屈玉玮), Xian Zhou(周娴), Bin-Bin Yan(颜玢玢), Qiang Wu(吴强), Kui-Ru Wang(王葵如), Xin-Zhu Sang(桑新柱), and Chong-Xiu Yu(余重秀). Chin. Phys. B, 2022, 31(6): 064213.
[10] Stability and luminescence properties of CsPbBr3/CdSe/Al core-shell quantum dots
Heng Yao(姚恒), Anjiang Lu(陆安江), Zhongchen Bai(白忠臣), Jinguo Jiang(蒋劲国), and Shuijie Qin(秦水介). Chin. Phys. B, 2022, 31(4): 046106.
[11] Acoustic radiation force on a rigid cylinder near rigid corner boundaries exerted by a Gaussian beam field
Qin Chang(常钦), Yuchen Zang(臧雨宸), Weijun Lin(林伟军), Chang Su(苏畅), and Pengfei Wu(吴鹏飞). Chin. Phys. B, 2022, 31(4): 044302.
[12] High-fidelity quantum sensing of magnon excitations with a single electron spin in quantum dots
Le-Tian Zhu(朱乐天), Tao Tu(涂涛), Ao-Lin Guo(郭奥林), and Chuan-Feng Li(李传锋). Chin. Phys. B, 2022, 31(12): 120302.
[13] Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer
Junhui Huang(黄君辉), Hao Chen(陈昊), Zhiyao Zhuo(卓志瑶), Jian Wang(王健), Shulun Li(李叔伦), Kun Ding(丁琨), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Desheng Jiang(江德生), Xiuming Dou(窦秀明), and Baoquan Sun(孙宝权). Chin. Phys. B, 2021, 30(9): 097805.
[14] Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector
Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Chin. Phys. B, 2021, 30(8): 087303.
[15] Suppression of leakage effect of Majorana bound states in the T-shaped quantum-dot structure
Wei-Jiang Gong(公卫江), Yu-Hang Xue(薛宇航), Xiao-Qi Wang(王晓琦), Lian-Lian Zhang(张莲莲), and Guang-Yu Yi(易光宇). Chin. Phys. B, 2021, 30(7): 077307.
No Suggested Reading articles found!